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Typical Characteristics
1000
100
10
10us
100us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
STARTING T J = 25 o C
1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1ms
10
STARTING T J = 150 o C
OPERATION IN THIS
AREA MAY BE
10ms
0.1
1
LIMITED BY r DS(on) DC
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
C apability
140
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
140
120
V GS = 10V
V GS = 5V
V GS = 4.5V
T J = -55 C
100
80
60
40
20
T J = 175 o C
T J = 25 o C
o
100
80
60
40
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4V
V GS = 3.5V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
14
12
I D = 70A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.0
1.8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
10
1.6
8
6
T J = 175 o C
1.4
1.2
1.0
T J = 25 C
4
o
0.8
I D = 70A
V GS = 10V
2
4
5
6 7 8 9
10
0.6
-80
-40
0
40
80
120
160
200
V GS , GATE TO SOURCE VOLTAGE ( V )
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDB8444 Re v A2 (W)
5
T J , JUNCTION TEMPERATURE ( o C )
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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